Sense amplifier circuit for semiconductor memories

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307279, 307578, 365205, 365208, H03K 524, H03K 3356, H03K 1704

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active

045476853

ABSTRACT:
An improved sense amplifier circuit for sensing information in the cells of a semiconductor memory device is presented. The sense amplifier circuit as presented includes AC-coupled positive feedback means to provide a reduction in sensing delay time, and thus, faster memory access time.

REFERENCES:
patent: 3463939 (1969-08-01), Sturman
patent: 3760194 (1973-09-01), Lutz
patent: 4039861 (1977-08-01), Heller et al.
patent: 4162539 (1979-07-01), Hebenstreit
patent: 4264832 (1981-04-01), Furman
patent: 4415995 (1983-11-01), Glock
Ayling, "Differential Signal Phase Sensing and Latching Detector"; IBM TDB; vol. 14, No. 6, pp. 1674; 11/1971.
Schuster, "Sense Amplifier with Resistive Decoupling of Bit Lines"; IBM TDB; vol. 23, No. 7A, pp. 3037-3038, 12/1980.
Cordaro et al, "Amoeba Sense Amplifier and Regenerator"; IBM TDB; vol. 21, No. 4, pp. 1479-1482; 9/1978.

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