Miscellaneous active electrical nonlinear devices – circuits – and – Specific signal discriminating without subsequent control – By amplitude
Reexamination Certificate
2006-08-01
2006-08-01
Ton, My-Trang Nu (Department: 2816)
Miscellaneous active electrical nonlinear devices, circuits, and
Specific signal discriminating without subsequent control
By amplitude
C365S049130
Reexamination Certificate
active
07084672
ABSTRACT:
A sense amplifier for a content addressable memory (CAM) device can utilize charge sharing between a match line and a pseudo-supply line to indicate a mis-match indication. A sense amplifier (200) can include match line (202) that can be precharged to a high supply potential (VCC), a sense node (206), and a pseudo-VSS (PVSS) line (204) that can be precharged to a low supply potential (VSS). In a match result, match line (202) can remain precharged, keeping sense device (P2) turned off, and sense node (206) remains low, generating a low output signal (SAOUT). In a mis-match result, match line (202) and sense node (206) can be equalized. A resulting drop in match line (202) potential can turn on sense device (P2), and sense node (206) can be pulled high. As a result, output signal (SAOUT) can be driven high.
REFERENCES:
patent: 4377855 (1983-03-01), Lavi
patent: 5270591 (1993-12-01), Ross
patent: 5428565 (1995-06-01), Shaw
patent: 5936873 (1999-08-01), Kongetira
patent: 6191970 (2001-02-01), Pereira
patent: 6240000 (2001-05-01), Sywyk et al.
patent: 6243280 (2001-06-01), Wong et al.
patent: 6442054 (2002-08-01), Evans et al.
patent: 6442090 (2002-08-01), Ahmed et al.
patent: 6515884 (2003-02-01), Sywyk et al.
patent: 6760242 (2004-07-01), Park et al.
patent: 6804134 (2004-10-01), Proebsting et al.
“A Ternary Content-Addressable Memory (TCAM) Based on 4T Static Storage and Including Current-Race Sensing Scheme” IEEE Journal of Solid-State Circuits, vol. 38, No. 1, Jan. 2003, pp. 155-158 by Arsovski et al.
“A Current-Saving Match-Line Sensing Scheme for Content-Adressable Memories” ISSCC 2003, Session 17, SRAM and DRAM, Paper 17.3 by Arsovski et al., pp. 304-305.
Meng Anita X.
Voelkel Eric H.
Nu Ton My-Trang
Sako Bradley T.
LandOfFree
Sense amplifier circuit for content addressable memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Sense amplifier circuit for content addressable memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sense amplifier circuit for content addressable memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3617868