Sense amplifier circuit for content addressable memory device

Details Sense amplifier circuit for content addressable memory device Sense amplifier circuit for content addressable memory device

2006-08-01

2006-08-01

Ton, My-Trang Nu (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Specific signal discriminating without subsequent control

By amplitude

C365S049130

Reexamination Certificate

active

07084672

ABSTRACT:
A sense amplifier for a content addressable memory (CAM) device can utilize charge sharing between a match line and a pseudo-supply line to indicate a mis-match indication. A sense amplifier (200) can include match line (202) that can be precharged to a high supply potential (VCC), a sense node (206), and a pseudo-VSS (PVSS) line (204) that can be precharged to a low supply potential (VSS). In a match result, match line (202) can remain precharged, keeping sense device (P2) turned off, and sense node (206) remains low, generating a low output signal (SAOUT). In a mis-match result, match line (202) and sense node (206) can be equalized. A resulting drop in match line (202) potential can turn on sense device (P2), and sense node (206) can be pulled high. As a result, output signal (SAOUT) can be driven high.

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“A Ternary Content-Addressable Memory (TCAM) Based on 4T Static Storage and Including Current-Race Sensing Scheme” IEEE Journal of Solid-State Circuits, vol. 38, No. 1, Jan. 2003, pp. 155-158 by Arsovski et al.
“A Current-Saving Match-Line Sensing Scheme for Content-Adressable Memories” ISSCC 2003, Session 17, SRAM and DRAM, Paper 17.3 by Arsovski et al., pp. 304-305.

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