Sense amplifier circuit for a random access memory

Details Sense amplifier circuit for a random access memory Sense amplifier circuit for a random access memory

1975-05-23

1977-01-11

Curtis, Marshall M.

Communications: electrical

Digital comparator systems

357 41, G11C 1144

Patent

active

040030342

ABSTRACT:
An improved sense amplifier circuit for a Random Access Memory (RAM) having 1-transistor memory cells which is completely dynamic in that it does not dissipate D.C. power during operation and is suitable for location at one end of a memory cell array. The trip-point voltage of the sense amplifier is controlled by a pair of capacitances. When the Random Access Memory (RAM) is fabricated as an integrated circuit these control capacitances are so structured and processed that the trip-point voltage tracks with the sense amplifier input signal voltages over a wide range of manufacturing process parameter variations.

REFERENCES:
patent: 3380035 (1968-04-01), Hecker
patent: 3662356 (1972-05-01), Michon et al.
patent: 3756876 (1973-09-01), Brown et al.
patent: 3831155 (1974-08-01), Tamaru et al.
patent: 3838405 (1974-09-01), Arnett
patent: 3906539 (1975-09-01), Sauermann et al.

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