Sense amplifier architecture for content addressable memory...

Details Sense amplifier architecture for content addressable memory... Sense amplifier architecture for content addressable memory...

2006-10-24

2006-10-24

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Associative memories

Ferroelectric cell

C365S227000, C365S205000, C365S204000, C365S196000

Reexamination Certificate

active

07126834

ABSTRACT:
A content addressable memory (CAM) device (200) can equalize a potential between a match line (202) and corresponding pseudo-supply (PVSS) line (204) in a pre-sense operation. In a sense operation, a sensing device (P4) can determine a match condition exists when the match line (202) potential varies from the PVSS line (204) potential. Complementary compare data lines (CD and BCD) can be equalized with one another in a pre-sense operation, while one compare data line (CD or BCD) can be equalized with bit lines (BB1and/or BB2) in the sensing operation.

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