Sense amplifier

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307468, 307585, 365104, 365196, G11C 706, G11C 900, G11C 1140, G11C 1704

Patent

active

048598828

ABSTRACT:
A sense amplifier of the invention includes a PMOS transistor, the source and the drain of which are respectively connected to a power source and an EP-ROM as a signal source to be detected, and the gate and the drain of which are controlled to be at the same potential, a PMOS transistor connected to the power source and the EP-ROM in parallel with the PMOS transistor, and a ratio circuit in which the gate of one PMOS transistor and an NMOS transistor constituting a CMOS transistor is connected to the signal source. This arrangement of the invention enables a high speed operation.

REFERENCES:
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patent: 4535259 (1985-08-01), Smarandoiu et al.
patent: 4634890 (1987-01-01), Lee
patent: 4692642 (1987-09-01), Fukuzo et al.
patent: 4742253 (1988-05-01), Giebel
patent: 4788460 (1980-11-01), Kobatake
patent: 4802138 (1989-01-01), Shimamune
patent: 4804871 (1989-02-01), Walters, Jr.
Pathak et al., "A 19-ns 250-mW CMOS Erasable Programmable Logic Device," IEEE Journal of Solid-State Circuits, vol. SC-21, No. 5, pp. 775-784, Oct. 1986.
Knecht et al., "A High-Speed Ultra-Low Power 64K CMOS EPROM with On-Chip Test Functions," IEEE Journal of Solid-State Circuits, vol. SC-18, No. 5, pp. 554-561, Oct. 1983.

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