Sense AMP for random access memory

Details Sense AMP for random access memory Sense AMP for random access memory

1974-10-03

1976-06-29

Hecker, Stuart N.

Communications: electrical

Digital comparator systems

340173FF, 340173CA, G11C 706, G11C 1124, G11C 1140

Patent

active

039672522

ABSTRACT:
A MOSFET random access memory having a highly sensitive sense amplifier is disclosed. The sense amplifier utilizes a field effect transistor connected in the common gate mode so as to produce a large output swing on a relatively low capacitance output node, which is the drain node of the transistor, as a result of a relatively low voltage swing produced by reading data stored in a memory cell on a high capacitance column bus connected to the source of the transistor. The sense amplifier is shown in differential configuration with a low power level shifting circuit and also with both static memory cells, where a greatly improved access time is produced, and with destructive readout cells where improved reliability is possible.

REFERENCES:
patent: 3714638 (1973-01-01), Dingwall et al.
patent: 3747077 (1973-07-01), Goser
patent: 3760381 (1973-09-01), Yao
patent: 3806898 (1974-04-01), Askin
patent: 3868656 (1975-02-01), Stein et al.

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