Semispherical integrated circuit structures

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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C257SE31061

Reexamination Certificate

active

07986022

ABSTRACT:
A diode comprises a substrate formed of a first material having a first doping polarity. The substrate has a planar surface and at least one semispherical structure extending from the planar surface. The semispherical structure is formed of the first material. A layer of second material is over the semispherical structure. The second material comprises a second doping polarity opposite the first doping polarity. The layer of second material conforms to the shape of the semispherical structure. A first electrical contact is connected to the substrate, and a second electrical contact is connected to the layer of second material. Additional semiconductor structures are formed by fabricating additional layers over the original layers.

REFERENCES:
patent: 3473067 (1969-10-01), Rittmayer
patent: 4165474 (1979-08-01), Myers
patent: 5087949 (1992-02-01), Haitz
patent: 5468304 (1995-11-01), Hammerbacher
patent: 5621239 (1997-04-01), Horie et al.
patent: 5785768 (1998-07-01), Nakata
patent: 5854123 (1998-12-01), Sato et al.
patent: 6177289 (2001-01-01), Crow et al.
patent: 6228727 (2001-05-01), Lim et al.
patent: 6288388 (2001-09-01), Zhang et al.
patent: 6451702 (2002-09-01), Yang et al.
patent: 6538299 (2003-03-01), Kwark et al.
patent: 6620996 (2003-09-01), Sugawara et al.
patent: 6667528 (2003-12-01), Cohen et al.
patent: 6803261 (2004-10-01), Zhang et al.
patent: 6812059 (2004-11-01), Kang et al.
patent: 6825087 (2004-11-01), Sharp et al.
patent: 7709914 (2010-05-01), Lee
patent: 2002/0158252 (2002-10-01), Zhang et al.
patent: 2003/0230788 (2003-12-01), Fujii
patent: 2004/0007753 (2004-01-01), Seki et al.
patent: 2005/0224828 (2005-10-01), Oon et al.
patent: 2007/0040233 (2007-02-01), Kariya
patent: 5235399 (1993-09-01), None

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