Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-07-26
2011-07-26
Ha, Nathan W (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257SE31061
Reexamination Certificate
active
07986022
ABSTRACT:
A diode comprises a substrate formed of a first material having a first doping polarity. The substrate has a planar surface and at least one semispherical structure extending from the planar surface. The semispherical structure is formed of the first material. A layer of second material is over the semispherical structure. The second material comprises a second doping polarity opposite the first doping polarity. The layer of second material conforms to the shape of the semispherical structure. A first electrical contact is connected to the substrate, and a second electrical contact is connected to the layer of second material. Additional semiconductor structures are formed by fabricating additional layers over the original layers.
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Cheng Kangguo
Furukawa Toshiharu
Robison Robert R.
Tonti William R.
Williams Richard Q.
Canale Anthony J.
Gibb I.P. Law Firm LLC
Ha Nathan W
International Business Machines - Corporation
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