Fishing – trapping – and vermin destroying
Patent
1995-05-23
1997-11-11
Kunemund, Robert
Fishing, trapping, and vermin destroying
437200, H01L 2120
Patent
active
056863519
ABSTRACT:
The present invention provides for the fabrication of single layer semimetal/semiconductor heterostructures and multilayer semimetal/semiconductor structures. Each semimetal/semiconductor layer fabricated in accordance with the present invention has compatible crystal symmetry across the heterojunction between a semimetal and a semiconductor. A single layer semimetal/semiconductor structure is substrate material having a (111) orientation, and then growing a multilayer semimetal/semiconductor structure may be grown from the single layer semimetal/semiconductor structure by growing an additional semiconductor grown, then growing an additional zincblende semiconductor repeating this process as many times as desired. Each semimetal to be sandwiched between semiconductors in the multilayer semimetal/semiconductor structure may be grown thin enough that the semimetal is converted into a semiconductor.
REFERENCES:
patent: 4250515 (1981-02-01), Esaki et al.
patent: 4558336 (1985-12-01), Chang et al.
patent: 4806993 (1989-02-01), Voisin et al.
patent: 4847666 (1989-07-01), Heremans et al.
patent: 4916495 (1990-04-01), Awano
patent: 4999694 (1991-03-01), Austin et al.
patent: 5079601 (1992-01-01), Esaki et al.
patent: 5159421 (1992-10-01), Wolff
A.Y. Cho and P.D. Dernier, J. Appl. Phys., 49.3328 (1978).
J. Massies, P. Delescluse, P. Etienne and N.T. Linh, Thin Solid Films, 90, 113 (1980).
J.R. Waldrop and R.W. Grant, Appl. Phys. Lett., 34, 630 (1979).
G.A. Prinz and J.J. Krebs, Appl. Phys. Lett., 39.397 (1981).
G.A. Prinz, Phys. Rev. Lett., 54, 1051 (1985).
R. Fashe, J.T. Zborowski, T.D. Golding, H.D. Shih, P.C. Chow, K. Matsuichi, B.C. Covington, A. Chi, J. Zheng, and H.F. Schaake, Jour. Cryst. Growth, 111, 677 (1991).
T.D. Golding, H.D. Shih, J.T. Zborowski, W.C. Fan, P.C. Chow, A. Vigliante, B.C. Covington, A. Chi, J.M. Anthony and H.F. Schaake, J. Vac. Sci. Tech., B10(2) (1992) 880-884.
J.T. Zborowski, W.C. Fan, T.D. Golding, A. Vigliante and P.C. Chow, J. Appl. Phys. 71(12) (1992) 5908-5912.
T.D. Golding, J.A. Dura, W.C. Wang, J.T. Zborowski, A. Vigliante and J.H. Miller, Jr., Investigation of Sb/GaSb Multilayer Structures for Potential Application as an Indirect Narrow-Bandgap Material, Semicond. Sci. Technol. 8 (1993) S117-S120.
M.A. Hollis, K.B. Nichols, R.A. Murphy, R.P. Gale, S. Rabe, W.J. Piacenti, C.O. Bozler and P.M. Smith, IEDM Tech. Digest, 102 (1985).
N. Tabatabaie, T. Sands, J.P. Harbison, H.L. Gilchrist, and V.G. Keramidas, Appl. Phys. Lett., 53, 2528 (1988).
J.W. Sulhoff, J.L. Zyskind, C.A. Burrus, R.D. Feldman, and R.F. Austin, Appl. Phys. Lett., 56, 388 (1990).
M.L. Huberman and J. Maserjian, Phys. Rev., B37, 9065 (1988).
W.A. Little, Phys. Rev., 134, A1416 (1964). (1970)!.
D. Allender, J. Bray, and J. Bardeen, Phys. Rev., B7, 1020 (1973).
C.M. Varma, P.B. Littlewood, S. Schmidt-Rink, E. Abrahams, and A.E. Ruckenstein, Phys. Rev. Lett., 63, 1996 (1989).
A. Virosztek and J. Ruvalds, Phys. Rev. Lett., 67, 1657 (1991).
I. Bozovic, Phys. Rev., B42, 1969 (1990).
J.H. Kim, I. Bozovic, C.B. Eom, T.H. Geballe and J.S. Harris, Jr., Physica, C174, 435 (1991).
J.P. Tidman and R.F. Frindt, Can. J. Phys., 54, 2306 (1976).
F.J. DiSalva and J.E. Graebner, Solid State Commun., 23, 825 (1977).
A.I. Rusinov, Do Chan Kat and Yu V. Kopaev, Sov. Phys. JETP, 38, 991 (1974).
S.J. Allen, Jr., N. Tabatabaie, C.J. Palmstrom, G.W. Hull, T. Sands, F. De Rosa, H.L. Gilchrist and K.C. Garrison, Phys. Rev. Lett., 62, 2309 (1989).
T. Sands, Appl. Phys. Lett., 52, 197 (1988).
J.P. Harbison, T. Sands, N. Tabatabaie, W.K. Chan, L.T. Florez, and V.G. Keramidas, Appl. Phys. Lett., 53, 1717 (1988).
J.E. Cunningham, J.A. Dura and C.P. Flynn, in Metalic Multilayer and Epitaxy, ed. by M. Hong, S. Wolf and D.C. Gubser, Metallurgical Society Inc. (1988).
B.C. Cullity, Elements of X-ray Diffraction, Addison-Wesley, 32-81 (2nd ed.).
J.P. Issi, Aust. J. Phys., 32, 585 (1979).
M.A. Herman and H. Sitter, Molecular Beam Epitaxy, Ed. Springer-Verlag (1989).
C.N. Berglund, IEEE Trans. Electron DEV Ed-16, 432 (1969).
D.L. Mitchell, P.C. Taylor and S.G. Bishop, Solid State Comm. 9, 1833 (1971).
P.A. Wolff and S.Y. Auyang, Semicond. Sci. Technol. 5, S57 (1990).
E.R. Youngdale, C.A. Hoffman, J.R. Meyer, F.J. Bartoli, X. Chu, J.P. Faurie, J.W. Han, J.W. Cook, Jr. and J.F. Schetzina, J.Vac. Sci. Technol. A 7, 365 (1989).
E.R. Youngdale, C.A. Hoffman, J.R. Meyer, F.J. Bartoli, J.W. Han, J.W. Cook, Jr., J. F. Schetzina, M.A. Engelhardt, E.W. Niles and H. Hochst, J. Vac. Sci. Technol. A 8, 1215 (1990).
E.R. Youngdale, C.A. Hoffmann, J.R. Meyer, F.J. Bartoli, M.A. Engelhardt and H. Hochst, Semicond. Sci. Technol. 5, S253 (1990).
E.R. Youngdale, J.R. Meyer, C.A. Hoffmann, F.J. Bartoli and A. Martinez, Solid State Comm. 80, 95 (1991).
E.R. Youngdale, J.R. Meyer, C.A. Hoffman, F.J. Bartoli, D.L. Partin, C.M. Thrush and J.P. Heremans, Appl. Phys. Lett. 57, 336 (1990).
E.R. Youngdale, J.R. Meyer, C.A. Hoffman, F.J. Bartoli, D.L. Partin, C.M. Thrush and J.P. Heremans, Appl. Phys. Lett., 59, 756 (1991).
E.R. Youngdale, J.R. Meyer, F.J. Bartoli and C.A. Hoffman, Int. J. Nonlinear Opt. Phys., vol. 1, No. 3 (1992) 493, 531.
R.M. Broudy and V.J. Mazurezyk, Semiconductors and Semimetals, vol. 18, ed. R. K. Willardson and A.C. Beer (Academic, New York, 1981), Chapter 5.
M.B. Reine, A.K. Sood an T.J. Tredwell, Semiconductors and Semimetals, vol. 18, ed. R.K. Willardson and A.C. Beer (Academic, New York, 1981), Chapter 6.
M.A. Kinch and M.W. Goodwin, J. Appl. Phys. 58, 4455 (1985).
J.R. Meyer, F.J. Bartoli, E.R. Youngdale and C.A. Hoffmann, J. Appl. Phys. 70, 4317 (1991).
S.C. Shin, J.E. Hilliard and J.B. Ketterson, J. Vac. Sci. Technol. A2, 296 (1984).
A. diVenere, H.K. Wong, G.K. Wong and J.B. Ketterson, Superlatt. Microstruct. 1, 21 (1985).
T.D. Golding, J.A. Dura, H. Wang, J.T. Zborowski, A. Vigliante, D.C. Chen, J.H. Miller, Jr. and J.R. Meyer, Semicond. Sci. Technol., 8 (1993) S117-S120.
K. Kash, P.A. Wolff and W.A. Bonner, Appl. Phys. Lett. 42, 173 (1983).
K. Seeger, Semiconductor Physics (Springer-Verlag, New York, 1973).
J. Heremans, D.T. Morelli, D.L. Partin, C.H. Olk, C.M. Thrush and T.A. Perry, Phys. Rev. B. 38, 10280 (1988).
Peter C. Sercel and Kerry J. Vahala, "Type II broken-gap quantum wires and quantum dot arrays: A novel concept for self-doping semiconductor nanostructures," Appl. Phys. Lett. 57(15) Oct. 8, 1990, pp. 1569-1571.
T.D. Golding, et al., "Molecular beam epitaxial growth of Sb/GaSb multilayer structures: potential application as a narrow bandgap system, " Seventh International Conference, 24-28 (Aug. 1992), vol. 127, No. 1-4, ISSN 0022-0248, and Journal of Crystal Growth 127 (Feb. 1993), pp. 777-782.
T.D. Golding, et al., "Investigation of Sb/GaSb multilayer structures for potential application as an indirect narrow-bandgap material," 6th International Conference, Narrow Gap Semiconductors, 1992, (Jul. 19-23 1992), vol. 8, No. 1S, ISSN 0268-1242, and Semicond. Sci. Technol. 8 (1993) S117-S120.
A.Y. Cho and P.D. Dernier, "Single-crystal-aluminum Schottky-barrier diodes prepared by molecular-beam epitaxy (MBE) on GaAs," J. Appl. Phys. 49(6), Jun. 1978, pp. 3328-3332.
J.T. Zborowski, et al., "Epitaxial and Interface Properties of InAs/InGaSb Multilayered Structures," J. Appl. Phys. 71(12), Jun. 15, 1992, pp. 5908-5912.
Guenais et al, "Vaccum Stability of Epitaxial NiGa and Ni.sub.2 Ga.sub.3 Layers MBi Grown Onto A GaAs Substrate", J. of Crystal Growth vol. 102 (1990) 925-932.
IBM Technical Disclosure Bulletin, vol. 7(5), Oct. 1964, pp. 411-412; Laff.
Noreika, et al., "Growth of Sb and InSb by Molecular-Beam Epitaxy," Journal of Applied Physics, vol. 52, No. 12, pp. 7416-7420 (Dec. 1981).
Golding Terry D.
Miller, Jr. John H.
Kunemund Robert
The University of Houston
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