Stock material or miscellaneous articles – Composite – Of metal
Patent
1992-07-17
1995-09-12
Turner, Archene
Stock material or miscellaneous articles
Composite
Of metal
428469, 428697, 428699, 428700, 428701, 428702, 257 22, B32B 1504
Patent
active
054495610
ABSTRACT:
The present invention provides for the fabrication of single layer semimetal/semiconductor heterostructures and multilayer semimetal/semiconductor structures. Each semimetal/semiconductor layer fabricated in accordance with the present invention has compatible crystal symmetry across the heterojunction between a semimetal and a semiconductor. A single layer semimetal/semiconductor structure is fabricated by growing a rhombohedral semimetal in a [111] direction on a substrate material having a (111) orientation, and then growing a zincblende semiconductor in a [111] direction on the semimetal. A multilayer semimetal/semiconductor structure may be grown from the single layer semimetal/semiconductor structure by growing an additional rhombohedral semimetal layer in a [111] direction on the preceding semiconductor grown, then growing an additional zincblende semiconductor layer in a [111] direction on the additional semimetal layer, and then repeating this process as many times as desired. Each semimetal to be sandwiched between semiconductors in the multilayer semimetal/semiconductor structure may be grown thin enough that the semimetal is converted into a semiconductor.
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Golding Terry D.
Miller, Jr. John H.
Speer Timothy M.
Turner Archene
University of Houston
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