Coherent light generators – Particular active media – Semiconductor
Patent
1987-09-23
1989-03-14
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
357 17, 357 61, 372 4, 372 37, H01S 319
Patent
active
048130494
ABSTRACT:
The laser has three regions p-n-n+ or n-p-p+ of magnetic element alloyed Group II-VI elements such as Cd, Hg, and Te doped with an element having a high atomic radius such as Sb or In. The magnetic element may be Mn or Fe. Vapor phase epitaxy is used to create a substrate having graded energy band gap characteristic across its thickness. A two-step liquid phase epitaxy process is used to grow an active layer and a passive layer to create the laser heterostructure. The index of refraction of the active region is higher than the indexes of refraction of the substrate and passive regions. The graded energy band gap and high doping of the substrate region results in a very low resistance which minimizes a temperature rise resulting from joule heating at high current densities. The relationship of the indexes of refraction of the layers result in double sided optical confinement to support lasing. In a semimagnetic semiconductor such as HgMnTe, the coefficient dE.sub.g /dB is large and opposite than in nonmagnetic semiconductors, making it possible to tune the laser by external magnetic fields.
REFERENCES:
patent: 4639756 (1987-01-01), Rosbeck et al.
patent: 4689650 (1987-08-01), Dinan
"The Magnetic Field Influence on the Photovoltaic Effect in Mn Alloyed Semiconductors", J.Vac.Sci.Technol. A4(4), Jul./Aug. 1986, S. Wong et al.
"LPE Growth Conditions for Cd.sub.1-x Mn.sub.x Te and Hg.sub.1-x Mn.sub.x Te Epitaxial Layers", J.Vac.Sci.Technol. A3(1), Jan./Feb., 1985, P. Becla et al.
"Infrared Photovoltaic Detectors Utilizing Hg.sub.1-x Mn.sub.x Te and Hg.sub.1-x-y Cd.sub.x MnyTe alloys",J.Vac.Sci.Technol A4(4), Jul./Aug. 1986, P. Becla et al.
"Pressure Controlled VPE Growth of Quaternary Hg.sub.1-x-y Cd.sub.x Mn.sub.y Te Epitaxial Layers", J.Vac.Sci.Technol. A3(1), Jan./Feb. 1985, P. Becla et al.
Davie James W.
Massachusetts Institute of Technology
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