Semicrystalline solar cell

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

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136256, 29572, 29590, 29591, 357 30, 357 59, 156647, 156648, 156662, 427 74, 427 88, 427 92, 427307, 204 15, 204 32R, 204 38B, H01L 3106, H01L 3118

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044018401

ABSTRACT:
A solar cell is provided which utilizes a semicrystalline semiconductor starting material. The solar cell has a metallic layer deposited over the grain boundaries between adjacent active grain areas of the material to collect the current generated in the grain areas. The metallic layer also shields the grain boundaries from illumination, thereby passivating the boundaries.

REFERENCES:
patent: 2588254 (1952-03-01), Lark-Horovitz et al.
patent: 4171997 (1979-10-01), Irmler
patent: 4197141 (1980-04-01), Bozler et al.
patent: 4249957 (1981-02-01), Koliwad et al.
patent: 4320168 (1982-03-01), Lindmayer
patent: 4366338 (1982-12-01), Turner et al.
G. W. Turner et al., "Efficient Large-Grained GaAs Homojunction Solar Cells", Conf. Record, 14th IEEE Photovoltaic Specialists Conf. (1980), pp. 1330-1332.
K. P. Pande et al., "The Preparation & Properties of Thin Polycrystalline GaAs Solar Cells With Grain Boundary Edge Passivation", IEEE Trans. Electron Devices, vol. Ed-27, pp. 635-640 (1980).
S. S. Chu et al., "Thin Film GaAs Solar Cells With Reduced Film Thickness", Conf. Record, 15th IEEE Photovoltaic Specialists Conf. (1981), pp. 1310-1315.

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