Coherent light generators – Particular active media – Semiconductor
Patent
1988-05-26
1989-08-29
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
372 46, 357 41, H01S 319
Patent
active
048624748
ABSTRACT:
A semiconductor laser device comprises a substrate having an n-type buffer layer, a semiconductor laser element and auxiliary element, provided side by side on the buffer layer. The semiconductor laser element includes a mesa portion having a p-type low resistant semiconductor region provided above the buffer layer, an active region consisting of a semiconductor formed on the buffer layer and low resistant region, a pair of buried portions integrally formed with the low resistive region and formed on and contiguous to opposite sides of the active region in the width direction. A lateral hole is provided between the buffer layer and low resistive region on the side of buried portion. The auxiliary element includes a high resistive regions integrally formed with the low resistant region and positioned on the sides of low resistive region.
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Patent Abstracts of Japan, vol. 11, No. 46 (E-479) [2493], Feb. 12, 1987.
Furuyama Hideto
Hirayama Yuzo
Morinaga Motoyasu
Nakamura Masaru
Okuda Hajime
Davie James W.
Kabushiki Kaisha Toshiba
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