Semicondutor having selectively enhanced field oxide areas and m

Details Semicondutor having selectively enhanced field oxide areas and m Semicondutor having selectively enhanced field oxide areas and m

1995-08-15

1997-08-26

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257506, 257650, H01L 2358, H01L 2900

Patent

active

056613350

ABSTRACT:
A field oxide is provided which purposefully takes advantage of fluorine mobility from an implanted impurity species. The field oxide can be enhanced or thickened according to the size (area and thickness) of the oxide. Fluorine from the impurity species provides for dislodgement of oxygen at silicon-oxygen bond sites, leading to oxygen recombination at the field oxide/substrate interface. Thickening of the oxide through recombination occurs after it is initially grown and implanted. Accordingly, initial thermal oxidation can be shortened to enhance throughput. The fluorine-enhanced thickening effect can therefore compensate for the shorter thermal oxidation time. Moreover, the thickened oxide regions are anistropically oxidized underneath existing thermally grown oxides and directly underneath openings between nitrides. The thickened oxides therefore do not cause additional shrinkage of the active areas which reside between field oxides.

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Wright, et al., "The Effect of Fluorine in Silicon Dioxide Gate Dielectrics", IEEE, (1989), pp. 879-889.
Sung et al., "A Comprehensive Study on p+ Polysilicon-Gate MOSFET'S Instability with Fluorine Incorporation", IEEE (1990), pp. 2312-2320.
Hsieh et al., "Characteristics of MOS Capacitors of BF.sub.2 or Implanted Polysilicon Gate with and without POCI.sub.3 Co-doped", IEEE, (1993), pp. 222-224.

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