Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2006-01-31
2006-01-31
Schillinger, Laura M. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257S302000, C257S490000
Reexamination Certificate
active
06992362
ABSTRACT:
A method and apparatus for increasing a breakdown voltage of a semiconductor device. The semiconductor device is constructed within an epitaxial tub of a first conductivity type formed within a dielectric material and comprises a surface diffusion region of a second conductivity type, opposite that of the first conductivity type, extending into the epitaxial tub, a trench surrounding and electrically isolating the epitaxial tub, a metallization line coupled to the surface diffusion traversing the semiconductor device and the trench, a first field limiting diffusion region of the second conductivity type disposed between the surface diffusion region and the trench and below the metallization line, a poly field plate positioned over the trench and beneath the metallization line, and a first contact coupled to the field limiting diffusion region, the first contact extending below the metallization line and overlapping the poly field plate.
REFERENCES:
patent: 4785337 (1988-11-01), Kenney
patent: 5070031 (1991-12-01), Zdebel
patent: 5233215 (1993-08-01), Baliga
patent: 5365097 (1994-11-01), Kenney
patent: 5641694 (1997-06-01), Kenney
patent: 5744386 (1998-04-01), Kenney
patent: 6236100 (2001-05-01), Pernyeszi
patent: 6249025 (2001-06-01), Tyagi
patent: 6536286 (2003-03-01), Moyer et al.
patent: 6538286 (2003-03-01), Back
patent: 6573550 (2003-06-01), Pernyeszi
patent: 6787847 (2004-09-01), Disney
patent: 2003/0173639 (2003-09-01), Pernyeszi
General Electronics Applications, Inc.
Schillinger Laura M.
Townsend and Townsend / and Crew LLP
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