Semiconductor with damage detection circuitry

Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – With means to prevent edge breakdown

Reexamination Certificate

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Details

C257S758000, C257S700000, C257SE23019

Reexamination Certificate

active

07397103

ABSTRACT:
Disclosed herein are novel damage detection circuitries implemented on the periphery of a semiconductor device. The circuitries disclosed herein enable the easy identification of cracks and deformation, and other types of damage that commonly occur during test and assembly processes of semiconductor devices.

REFERENCES:
patent: 6747349 (2004-06-01), Al-Dabagh et al.
patent: 2003/0205737 (2003-11-01), Fenner et al.
patent: 2004/0085099 (2004-05-01), Ratchkov et al.
patent: 2004/0150070 (2004-08-01), Okada et al.

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