Semiconductor with a conductivity modulating-type MISFET

Details Semiconductor with a conductivity modulating-type MISFET Semiconductor with a conductivity modulating-type MISFET

1992-01-21

1994-01-04

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Bidirectional rectifier with control electrode

257212, 257378, 257488, H01L 2702

Patent

active

052763390

ABSTRACT:
In a semiconductor equipped with a conductivity modulating MISFET (IGBT) with a high withstand voltage in blocking forward and reverse directions, a withstand power is maintained in lieu of a drain wall disposed to improve the withstand power, and a current-carrying capacity, which is restricted by the drain wall, is increased. A potential at the drain wall disposed between a DMOS section and a collector section is transmitted at a portion between the collector section and an isolation layer by an channel stop electrode (201) that maintains the withstand power, while an increase in the current-carrying capacity is achieved by forming a conductivity modulating layer alone between the above section.

REFERENCES:
patent: 4377816 (1983-03-01), Sittig
patent: 4654691 (1987-03-01), Shirasawa et al.
High Voltage DMOS and IGBT for FPD Driver IC, Proc. of the 1990 Int'l. Symposium on Power Semiconductor Devices & ICs, Tokyo, pp. 60-65.

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