Semiconductor waveguide structure of a II-VI group compound

Details Semiconductor waveguide structure of a II-VI group compound Semiconductor waveguide structure of a II-VI group compound

1994-05-18

1995-05-16

Lee, John D.

Optical waveguides

Having particular optical characteristic modifying chemical...

Of waveguide core

385131, G02B 610

Patent

active

054168848

ABSTRACT:
A semiconductor waveguide structure of the II-VI group compound semiconductor made of the II group element and the VI group element. The waveguide structure includes a waveguide layer and clad layers which puts the waveguide layer therebetween. The waveguide layer has a refractive index larger than a refractive index of each clad layer. At least one of the clad layers contains the element Cd. With such an arrangement, the refractive index of one clad layer is established to be different from that of the other clad layer. In such a case, it is preferable that the semiconductor waveguide structure comprises at least two waveguide layers which are adjacent to each other and that the structure has either one of the features as follows: each refractive index of the waveguide layers varies stepwise at each boundary surface of the layers; the refractive index of at least one of the waveguide layers varies so as to be inclined; and super lattice layers are formed between the clad layer and the waveguide layers. Further, in the arrangement, more than two waveguide layers and clad layers may be formed in such a manner that each of the waveguide layer is put between the clad layers.

REFERENCES:
patent: 4701009 (1987-10-01), Tangonan et al.
patent: 5013129 (1991-05-01), Harada et al.
patent: 5245465 (1993-09-01), Tomita et al.
Ichino et al. "Design and Fabrication of II-VI Semiconductor Heterostructures", Japanese Journal of Applied Physics, vol. 61, No. 2, pp. 117-125, Feb. 1992.

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