Semiconductor wafer treatment method and apparatus therefor

Details Semiconductor wafer treatment method and apparatus therefor Semiconductor wafer treatment method and apparatus therefor

2005-08-30

2010-06-08

Deo, Duy-Vu N (Department: 1792)

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

C438S745000, C438S749000

Reexamination Certificate

active

07731801

ABSTRACT:
In the ozone water treatment process, the silicon wafer is treated with the first ultra-pure water that includes ozone. The first ultra-pure water is refined by the ultraviolet ray sterilization method. The first ultra-pure water includes total organic carbon content of more than 1 μg/liter and not more than 20 μg/liter, so that the silicon wafer of the predetermined degree of cleanliness is obtained. The silicon wafer is treated by using the second ultra-pure water that has a lower TOC value than the first ultra-pure water in the ultra-pure water rinsing process (including the chemical solution cleaning process as required). The second ultra-pure water is refined by the ultraviolet ray oxidization method, and includes total organic carbon content with a concentration of 1 μg/liter or less. Thus the silicon wafer of the predetermined degree of cleanliness is obtained.

REFERENCES:
patent: 5447640 (1995-09-01), Omi et al.
patent: 5896875 (1999-04-01), Yoneda
patent: 5954885 (1999-09-01), Ohmi
patent: 6406551 (2002-06-01), Nelson et al.
patent: 6464867 (2002-10-01), Morita et al.
patent: 2004-079649 (2004-03-01), None

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