Semiconductor wafer treating method

Details Semiconductor wafer treating method Semiconductor wafer treating method

1994-07-08

1995-11-28

Silbaugh, Jan H.

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134 2, 134 26, 134 28, B08B 308, B08B 704

Patent

active

054703930

ABSTRACT:
A surface of a semiconductor water is washed with HF water solution, thereby removing an oxide film formed on a surface of the semiconductor water. Next, the surface of the semiconductor water is treated with mixed liquid of HF, HCl, H.sub.2 O.sub.2, and deionized water. Then, the surface of the semiconductor wafer is treated with mixed liquid of HCl, H.sub.2 O.sub.2, and deionized water, thereby removing the surface of the semiconductor wafer to remove metallic impurity such as Cu adhered onto the surface of the semiconductor wafer.

REFERENCES:
patent: 4264374 (1981-04-01), Beyer et al.
patent: 4778532 (1988-10-01), McConnell et al.
patent: 5129955 (1992-07-01), Tanaka
patent: 5221423 (1993-06-01), Sugino et al.
patent: 5290361 (1994-03-01), Hayashida et al.
patent: 5308400 (1994-05-01), Chen

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