Semiconductor wafer treating device utilizing ECR plasma

Details Semiconductor wafer treating device utilizing ECR plasma Semiconductor wafer treating device utilizing ECR plasma

1988-12-02

1990-04-10

Bueker, Richard

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 38, 427 47, 118723, 156345, 156646, 156654, 156657, C23C 1650

Patent

active

049159798

ABSTRACT:
A semiconductor wafer treating device utilizing a gas plasma generated by electron cyclotron resonance (ECR) is disclosed whch comprises a wafer treating chamber and a plasma generating chamber communicating with the wafer treating chamber. Microwave energy at a frequency of not more than 2 GHz and not less than 100 MHz is supplied to the plasma generating chamber which is surrounded by a solenoidal coil and produces a magnetic field in the plasma generating chamber and in the wafer treating chamber to produce ECR and transport the plasma generated by ECR to the wafer. Thus, the Larmor radius of the electrons moving in helical paths in electron cyclotron resonance in the plasma generating chamber is optimized to make the plasma spatially uniform. Consequently, the uniformity of the treatment on the wafer is improved.

REFERENCES:
patent: 4401054 (1983-08-01), Matsuo
patent: 4461783 (1984-07-01), Yamazaki
patent: 4808258 (1989-02-01), Otsubo
Bruce, "Anisotropy Control in Dry Etching", Solid State Technology/Oct. 1981, pp. 64-68.

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