Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1988-11-10
1989-10-31
Nguyen, Nam X.
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
118 501, 118623, 156345, 20419212, C23C 1434, B05B 502
Patent
active
048775096
ABSTRACT:
An apparatus for treating semiconductor wafers utilizing a plasma generated by electron cyclotron resonance (ECR) is disclosed in which a microwave is supplied to a plasma generating chamber via a rectangular waveguide, a rectangular-to-circular microwave converter, and a circular polarization converter. The polarization converter may comprise a phase shift plate of a dielectric material or an electrically conductive material disposed in a circular waveguide in the form of a metallic cylinder. The polarization converter transforms a circular TE.sub.11 mode microwave supplied from the rectangular-to-circular microwave converter to a circularly polarized one by rotating the direction of the electric field of the microwave in the TE.sub.11 mode one complete turn in one period of the microwave. Thus, the electric field strength of the microwave supplied to the plasma generating chamber is averaged over the time along the circumferential direction in the plasma generating chamber to make the density of plasma generation therein spatially uniform. The spatially uniformly distributed plasma generated in the plasma generating chamber is conveyed to the wafer in the wafer treating chamber to effect a treatment of the wafer.
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Nishimura et al., "Theoretical Investigation on Microwave Propagation for ECR Plasma Generation" (1987).
Kiuchi et al, "High-throughput ECR Plasma CVD with High Plasma-Generation Efficiency" (1987).
Matsuo et al, "ECR Etchin CVD Favrication Apparatus" extracted from Dec. 1987, issue of Nikkei Microdevice.
Fujiwara Nobuo
Kawai Kenji
Morita Hiroshi
Nishioka Kyusaku
Ogawa Toshiaki
Mitsubishi Denki & Kabushiki Kaisha
Nguyen Nam X.
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