Semiconductor wafer to be etched electrochemically

Details Semiconductor wafer to be etched electrochemically Semiconductor wafer to be etched electrochemically

1991-08-20

1992-12-15

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Responsive to non-optical, non-electrical signal

156643, 156901, 437170, 437921, 257418, 257419, 257459, 257461, H01L 2714

Patent

active

051722070

ABSTRACT:
A semiconductor wafer including a plurality of chips having respective portions to be etched electrochemically with application of an electric voltage to the semiconductor wafer immersed in an etching solution. The semiconductor wafer includes electric circuits formed therein for controlling electric energy applied to the respective portions.

REFERENCES:
patent: 4534100 (1985-08-01), Lane
patent: 4703996 (1987-11-01), Glass et al.
patent: 4754312 (1988-06-01), Langer et al.
patent: 5069749 (1991-12-01), Gutierrez
Gealer et al., "The Effect of an Interfacial P-N Junction on the Electrochemical Passivation of Silicon in Aqueous Ethylenediamine-Pyrocatechol", Journal of the Electrochemical Society, May 1988, pp. 1180-1183.

Affiliated with

Also associated with

Rating

Semiconductor wafer to be etched electrochemically does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor wafer to be etched electrochemically, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor wafer to be etched electrochemically will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2097691