Semiconductor wafer thinning method, and thin semiconductor...

Details Semiconductor wafer thinning method, and thin semiconductor... Semiconductor wafer thinning method, and thin semiconductor...

2005-08-16

2005-08-16

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S977000, C438S928000, C438S959000

Reexamination Certificate

active

06930023

ABSTRACT:
In a method for thinning a semiconductor wafer by grinding a back surface of the semiconductor wafer in which semiconductor devices2are formed on its surface, the surface of the semiconductor wafer1is adhered to a support4via an adhesive layer3, the back surface of the semiconductor wafer is ground while holding the support, and then the thinned semiconductor wafer is released from the support. Preferably, a semiconductor wafer is used as the support, a thermal release double-sided adhesive sheet is used as the adhesive layer, and they are separated by heating after grinding. Thus, there are provided a method for thinning a semiconductor wafer, which enables production of semiconductor wafers having a thickness of about 120 μm or less without generating breakage such as cracking or chipping during the processing step and so forth as much as possible at a low cost, and a semiconductor wafer thinned further compared with conventional products in spite of a large diameter of 6 inches (150 mm) or more.

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