Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Reexamination Certificate
2008-08-15
2011-10-18
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
C257S327000, C257S328000, C257SE21014
Reexamination Certificate
active
08039843
ABSTRACT:
A semiconductor substrate according to an embodiment includes: a first semiconductor wafer having a first crystal; and a second semiconductor wafer formed of a second crystal substantially same as the first crystal on the first semiconductor wafer, a crystal-axis direction of unit cell thereof being twisted at a predetermined angle around a direction vertical to a principal surface of the second semiconductor wafer from that of the first semiconductor wafer.
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B. Doris, et al, “A Simplified Hybrid Orientation Technology (SHOT) for High Performance CMOS”, IEEE Symposium on VLSI Technology Digest of Technical Papers, 2004, pp. 86-87.
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Pert Evan
Wilson Scott R
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