Semiconductor wafer, semiconductor device, and method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – Groove

Reexamination Certificate

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C257S618000, C257S623000, C257S797000

Reexamination Certificate

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07994614

ABSTRACT:
Provided is a semiconductor wafer with a scribe line region and a plurality of element forming regions partitioned by the scribe line region, the semiconductor wafer including: conductive patterns formed in the scribe line region; and an island-shaped passivation film formed above at least a conductive pattern, which is or may be exposed to a side surface of a semiconductor chip obtained by dicing the semiconductor wafer along the scribe line region, among the conductive patterns, so that the island-shaped passivation film is opposed to the conductive pattern.

REFERENCES:
patent: 2006/0103025 (2006-05-01), Furusawa et al.
patent: 2008/0174023 (2008-07-01), Park
patent: 2006-108489 (2006-04-01), None
patent: 2006-140404 (2006-06-01), None
patent: 2006-203215 (2006-08-01), None

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