Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2008-07-25
2009-06-23
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S691000, C438S659000
Reexamination Certificate
active
07550387
ABSTRACT:
A semiconductor wafer processing method for planarizing an additional layer formed on the front side of a semiconductor wafer. First, the wafer is held on a chuck table included in a cutting device in the condition where the additional layer is exposed, and a table base supporting the chuck table is moved toward a working position. In concert with the movement of the table base, the exposed surface of the additional layer is cut by a bit of a cutting tool rotationally driven by a spindle motor. Thereafter, the exposed surface of the additional layer is polished by a polishing device to planarize the exposed surface of the additional layer.
REFERENCES:
patent: A 9-82616 (1997-03-01), None
patent: WO 2004/053967 (2004-06-01), None
Kimura Yusuke
Sekiya Kazuma
Disco Corporation
Greer Burns & Crain Ltd.
Pert Evan
Tran Tan N
LandOfFree
Semiconductor wafer processing method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor wafer processing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor wafer processing method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4059482