Semiconductor wafer processing CVD reactor apparatus comprising

Details Semiconductor wafer processing CVD reactor apparatus comprising Semiconductor wafer processing CVD reactor apparatus comprising

1992-06-15

1993-12-28

Hearn, Brian E.

Coating apparatus

Gas or vapor deposition

With treating means

118715, 156345, C23C 1650

Patent

active

052735885

ABSTRACT:
A semiconductor wafer processing apparatus, particularly a CVD reactor, is provided with plasma cleaning electrodes integrated into process gas flow shaping structure that smoothly directs the gas past the wafer on a susceptor. The processing apparatus preferably has a showerhead or other inlet to direct a gas mixture onto a wafer and a plurality of baffles to reduce turbulence. Plasma cleaning electrodes are included in the baffles or the showerhead or both, one or more of which preferably have cleaning gas outlet orifices therein, preferably evenly distributed around the axis of the susceptor to provide uniform cleaning gas flow.

REFERENCES:
patent: 4340462 (1982-07-01), Koch
patent: 4629635 (1986-12-01), Brors
patent: 4976996 (1990-12-01), Monkowski et al.
patent: 5006192 (1991-04-01), Deguchi
Spectrum CVD, Inc. Product Specification Model 202, Brochure, 1990.
Spectrum Model 211 CVD System, Spectrum CVD, Inc., Brochure.

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