Semiconductor wafer processing apparatus having a Bernoulli chuc

Details Semiconductor wafer processing apparatus having a Bernoulli chuc Semiconductor wafer processing apparatus having a Bernoulli chuc

1991-07-17

1994-12-06

Chaudhuri, Olik

Metal working

Barrier layer or semiconductor device making

118728, 437925, H05B 678, H01L 2168

Patent

active

053707095

ABSTRACT:
A suction plate is provided in a reaction chamber. In the central portion of the suction plate, there is formed a blowing port for blowing gas to a rear surface of the suction plate. In the blowing port, there are provide pipes for introducing carrier gas and reactant gas. Gas, which is introduced by these pipes, and the suction plate are heated by a lamp formed in the outside of the reaction chamber. If gas introduced by these pipes and reactant gas are blown from the blowing port to the rear of the suction plate in a state that a semiconductor substrate is close to the portion in the vicinity of the suction plate, the semiconductor substrate is sucked to the suction plate in a noncontact state and an epitaxial layer is formed on the semiconductor substrate in this state.

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