Semiconductor wafer processing apparatus

Details Semiconductor wafer processing apparatus Semiconductor wafer processing apparatus

1988-10-14

1991-09-03

Beck, Shrive

Coating apparatus

Gas or vapor deposition

118500, 118719, 118725, 118728, 156345, 156646, 4272481, C23C 1600

Patent

active

050443143

ABSTRACT:
A semiconductor wafer processing apparatus has a processing housing including a pair of coaxial hollow cylindrical members each defining an inner cylindrical chamber for directing a treatment medium toward a wafer and an annular chamber for withdrawing the treatment medium. A wafer support which can include a heater holds one or two wafers substantially normal to the axis of the processing housing. The treatment medium is introduced in vapor phase at very low to high velocity and at subatmospheric to superatmospheric pressure. Radiation can be introduced into the housing, and wafers can be automatically moved into and out of the housing and from the housing to another treating apparatus.

REFERENCES:
patent: 2897331 (1959-07-01), McFarlane et al.
patent: 3083286 (1963-03-01), Swetlitz
patent: 3391270 (1968-07-01), Harris et al.
patent: 3505499 (1970-04-01), Walther
patent: 3536893 (1970-10-01), Cranley
patent: 3598082 (1971-08-01), Rice
patent: 3623712 (1971-11-01), McNeilly
patent: 3656454 (1972-04-01), Schrader
patent: 3673385 (1972-06-01), Drugmand et al.
patent: 3815575 (1974-06-01), Danis
patent: 3983359 (1976-09-01), Walker et al.
patent: 4047496 (1977-09-01), McNeilly et al.
patent: 4081313 (1978-03-01), McNeilly et al.
patent: 4127437 (1978-11-01), Bersin et al.
patent: 4264374 (1981-04-01), Beyer et al.
patent: 4274936 (1981-06-01), Love
patent: 4401507 (1983-08-01), Engle
patent: 4402997 (1983-09-01), Hogan et al.
patent: 4456186 (1984-06-01), Ando
patent: 4496609 (1985-01-01), McNeilly et al.
patent: 4579609 (1986-04-01), Reif et al.
patent: 4605479 (1986-08-01), Faith, Jr.
patent: 4609428 (1986-09-01), Fujimura
patent: 4659401 (1987-04-01), Reif et al.
patent: 4668338 (1987-05-01), Maydan et al.
patent: 4668365 (1987-05-01), Foster et al.
patent: 4749440 (1988-06-01), Blackwood et al.
patent: 4778559 (1988-10-01), McNeilly
Holmes, P. J. and J. E. Snell, "A Vapor Etching Technique for the Photolithography of Silicon Dioxide", Microelectronics and Reliability (Pergamon Press, 1966), vol. 5, pp. 337-341.
Beyer, K. D. and M. H. Whitehill, "Etching of SiO.sub.2 in Gaseous HF/H.sub.2 O", IBM Technical Disclosure Bulletin, vol. 19, No. 7 (Dec. 1976), p. 2513.
Beyer, K. D., "Silicon Surface Cleaning Process", IBM Technical Disclosure Bulletin, vol. 20, No. 5 (Oct. 1977), pp. 1746-1747.
Bersin, Richard L. and Richard F. Reichelderfer, "The DryOx.TM. Process for Etching Silicon Dioxide", Solid State Technology (Apr. 1977), pp. 77-79.
Beyer, K. D. and T. M. Reith, "Removal of Native Oxide Layer on a Semiconductor Surface", IBM Technical Disclosure Bulletin, vol. 22, No. 7 (Dec. 1979), p. 2839.
Jun-Ru, Ma et al., "A New Conformal Dry-Etch Technique for Submicrometer Structures", J. Vac. Sci. Technol., vol. 19, No. 4 (Nov./Dec. 1981), pp. 1385-1389.
Soviet Inventions Illustrated, Section El: Electrical Week 8627, Aug. 13, 1986, p. 20.
Soviet Inventions Illustrated, Section Ch: Chemical, Week E06, Mar. 24, 1982, p. 16.

Affiliated with

Also associated with

Rating

Semiconductor wafer processing apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor wafer processing apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor wafer processing apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1000835