Semiconductor wafer optical scanning system and method using swa

Details Semiconductor wafer optical scanning system and method using swa Semiconductor wafer optical scanning system and method using swa

1997-12-09

2000-01-04

Rosenberger, Richard A.

Optics: measuring and testing

Inspection of flaws or impurities

Surface condition

G01N 2188

Patent

active

060116196

ABSTRACT:
A semiconductor wafer optical scanning system and method for determining defects on a semiconductor wafer is disclosed. The method for determining wafer defects is based on maximum allowable defects on a swath basis, rather than maximum allowable defects on a wafer basis. The method step include determining the scanned area of an individual swath that is based on a recipe set-up, consistent with the capability of the optical scanning equipment being used and the particular semiconductor wafer being tested for defects. The predetermined swath area is supplied and stored in the optical scanning system along with the maximum allowable defect density determined by the user. By using the predetermined maximum allowable defects for a swath as a limit, defect analysis may be performed on the entire wafer. The optical scanning system would stop acquiring defects for the current swath being analyzed whenever the defect limit is reached, or until the swath defect analysis has been completed. The optical scanning would proceed to the next swath determining its defect and continuing in such a manner until the wafer is completely scanned.

REFERENCES:
patent: 4449818 (1984-05-01), Yamaguchi et al.
patent: 5331396 (1994-07-01), Yakawa et al.

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