Semiconductor wafer, method of manufacturing the same and...

Details Semiconductor wafer, method of manufacturing the same and... Semiconductor wafer, method of manufacturing the same and...

2011-06-21

2011-06-21

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

By electromagnetic irradiation

C438S798000, C257SE27001, C257SE21602

Reexamination Certificate

active

07964475

ABSTRACT:
A modified layer5and an altered layer8are formed outside a dicing point of a dicing area3.Thus without forming another interface between different physical properties on the dicing point, it is possible to prevent chipping from progressing along a crystal orientation from an interface between a semiconductor element2and a semiconductor substrate1and from a surface of the semiconductor element during dicing, thereby suppressing the development of chipping to the semiconductor element.

REFERENCES:
patent: 2002-222777 (2002-08-01), None

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