Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-07-31
2007-07-31
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S928000
Reexamination Certificate
active
10512637
ABSTRACT:
The present invention provides a method for manufacturing a semiconductor wafer capable of manufacturing a wafer without ring-like sag in an outer peripheral portion thereof when polishing an alkali etched wafer, and a wafer without the ring-like sag in an outer peripheral portion thereof. The present invention comprises: a back surface part polishing and edge polishing step for performing back surface part polishing and edge polishing such that mirror polishing is performed on a chamfered portion and an inner part extending inward from a boundary between the chamfered portion and a back surface of a starting wafer; and a front surface polishing step for mirror polishing a front surface of the wafer subjected to the back surface part polishing and edge polishing step holding the wafer by the back surface thereof.
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Arai Katsunori
Hayashi Nobuyuki
Kida Takahiro
Miyazaki Seiichi
Nishimura Kazuhiko
Shin-Etsu Handotai & Co., Ltd.
Wilczewski M.
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