Semiconductor wafer inspection method

Details Semiconductor wafer inspection method Semiconductor wafer inspection method

2009-09-08

2011-10-25

Toatley, Jr., Gregory J. (Department: 2877)

Optics: measuring and testing

Inspection of flaws or impurities

Surface condition

C356S237200

Reexamination Certificate

active

08045150

ABSTRACT:
A semiconductor wafer inspection method includes: an imaging step in which a first image being an image of the chamfered surface seen from the main surface side and a second image being an image of the chamfered surface seen from the back surface side are taken; a calculation step in which a first width is obtained based on the first image, the first width being a width of the chamfered surface seen from the main surface side, a second width is obtained based on the second image, the second width being a width of the chamfered surface seen from the back surface side, and a ratio of the first width to the second width thus obtained is calculated; and a shape determination step in which a form of the chamfered surface is determined to be abnormal in a case where the ratio is out of a predetermined range.

REFERENCES:
patent: 2003/0169916 (2003-09-01), Hayashi et al.
patent: 2009/0147250 (2009-06-01), Tanaka et al.
patent: 2003-139523 (2003-05-01), None
patent: 2003-243465 (2003-08-01), None
English language Abstract of JP 2003-139523, May 14, 2003.
English language Abstract of JP 2003-243465, Aug. 29, 2003.

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