Semiconductor wafer having discharge structure to substrate

Details Semiconductor wafer having discharge structure to substrate Semiconductor wafer having discharge structure to substrate

2005-01-25

2005-01-25

Thomas, Tom (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With peripheral feature due to separation of smaller...

C257S048000, C257S773000, C257S774000, C438S401000, C438S462000

Reexamination Certificate

active

06847096

ABSTRACT:
To prevent an abnormal discharge phenomenon from occurring due to charge build up on conductive layer region that has a large surface area and that is a region other than the region where a semiconductor device is formed on a semiconductor substrate, the semiconductor substrate structure being made to have an electrical connection between the conductive layer region having a large surface area and the semiconductor substrate.

REFERENCES:
patent: 6236073 (2001-05-01), Hsu
patent: 6627917 (2003-09-01), Fenner et al.
patent: 20010010964 (2001-08-01), Geissler et al.
patent: 20020158348 (2002-10-01), Petrucci et al.
patent: 20030030129 (2003-02-01), Terada et al.

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