Semiconductor wafer for semiconductor components and...

Details Semiconductor wafer for semiconductor components and... Semiconductor wafer for semiconductor components and...

2007-08-23

2010-12-28

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

C438S102000

Reexamination Certificate

active

07858501

ABSTRACT:
A semiconductor wafer for semiconductor components and to a method for its production is disclosed. In one embodiment, the semiconductor wafer includes a front side with an adjoining near-surface active zone as basic material for semiconductor component structures. The rear side of the semiconductor wafer is adjoined by a getter zone for gettering impurity atoms in the semiconductor wafer. The getter zone contains oxygen precipitates. In the near-surface active zone, atoms of doping material are located on lattice vacancies. The atoms of doping material have a higher diffusion coefficient that the oxygen atoms.

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Falster, Orthoganal Defect Solutions for Silicon Wafers: MDZ and Micro-Defect Free Crystal Growth, Future Fab International, Issue 12, 2002, 10 pages.

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