Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant
Patent
1996-04-24
1998-03-31
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
With specified dopant
257913, 257227, 257618, 257291, 437 95, 437 11, H01L 2904, H01L 21265, H01L 21306
Patent
active
057341958
ABSTRACT:
In a semiconductor wafer according to this invention, an epitaxial layer is formed on the surface of a semiconductor substrate, a second element which is not the same but homologous as a first element constituting the semiconductor substrate is present to have a peak concentration on the semiconductor substrate side rather than the surface, and this peak concentration is 1.times.10.sup.16 atoms/cm.sup.3 or more.
REFERENCES:
patent: 4053335 (1977-10-01), Hu
patent: 4490216 (1984-12-01), McConnell
patent: 4579601 (1986-04-01), Samata et al.
patent: 4766086 (1988-08-01), Ohshima et al.
patent: 4885257 (1989-12-01), Matsushita
patent: 4914046 (1990-04-01), Tobin et al.
patent: 5098852 (1992-03-01), Niki et al.
patent: 5130260 (1992-07-01), Suga et al.
patent: 5130261 (1992-07-01), Usuki et al.
patent: 5143858 (1992-09-01), Tomozane et al.
patent: 5194395 (1993-03-01), Wada
patent: 5223734 (1993-06-01), Lowrey et al.
patent: 5250445 (1993-10-01), Bean et al.
patent: 5289031 (1994-02-01), Watanabe et al.
patent: 5405803 (1995-04-01), Kusaka
patent: 5453385 (1995-09-01), Shinji
patent: 5514885 (1996-05-01), Myrick
Higuchi Takayoshi
Kanbe Hideo
Kusaka Takahisa
Ohashi Masanori
Takizawa Ritsuo
Kananen Ronald P.
Sony Corporation
Thomas Tom
Williams Alexander Oscar
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