Semiconductor device manufacturing: process – With measuring or testing
Patent
1998-01-16
1999-08-31
Picardat, Kevin M.
Semiconductor device manufacturing: process
With measuring or testing
438 17, 148DIG162, H01L 2166
Patent
active
059465433
ABSTRACT:
An object is to obtain a semiconductor wafer evaluation method and a semiconductor device manufacturing method having a reduced turn-around time and requiring no process apparatus and no dielectric breakdown characteristic evaluation device in evaluation of the dielectric breakdown characteristic of the oxide film. A sample wafer (1) is etched by using an SC-1 solution bath (2) to change process defects caused in the fabrication process including mirror polishing into pits. The number of pits is detected with a dust particle inspection system, and the dielectric breakdown characteristic of the sample wafer 1 can be evaluated by using the number of detected pits and previously obtained relations between the number of pits and the dielectric breakdown characteristic.
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Keigo Hikawa, Baifukan, pp. 60-63, "Bulk Crystal Growth Technique" date unknown.
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Fujise Tsuneaki
Gohara Masanori
Kimura Yasuhiro
Kume Morihiko
Mitsubishi Denki Kabushiki
Picardat Kevin M.
Sumitomo Sitix Corporation
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