Semiconductor wafer etching process and semiconductor device

Details Semiconductor wafer etching process and semiconductor device Semiconductor wafer etching process and semiconductor device

1996-06-13

1998-12-01

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438736, 438740, 438743, H01L 21302

Patent

active

058438491

ABSTRACT:
A first semiconductor layer and a second semiconductor layer are laminated on a semiconductor wafer in that order. A resist pattern having an opening is formed on the second semiconductor layer. The second semiconductor layer is etched through the opening in the formed resist pattern to expose the first semiconductor layer. A surface oxide film is formed on the exposed surface of the first semiconductor layer and then selectively etched away. Alternatively, the exposed surface of the first semiconductor layer is subjected to a separate oxidization treatment and the resulting surface oxide film is selectively removed in the subsequent etching.

REFERENCES:
patent: 5370767 (1994-12-01), Miyakuni et al.
patent: 5567659 (1996-10-01), Pakulski et al.

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