Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1996-12-20
1999-01-12
Niebling, John F.
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438723, 438907, 1566431, 1566461, 1566511, H01L 213065
Patent
active
058588787
ABSTRACT:
The present invention discloses a method including the main etching step for etching a semiconductor wafer having a resist film serving as an etching mask by plasma of an etching gas, and an post-processing step for processing the object after the main etching so as to remove remaining part of the resist film, a polymer adhered to the surface of the object, and a damage layer created during the primary etching. In the post-processing step, O.sub.2 gas is made into plasma, by which the remaining part of the resist layer, and the polymer adhered to the surface of the object are removed, and after such a process is substantially finished, a mixture gas including a halogen-containing gas such as CF.sub.4 and O.sub.2 gas is made into plasma, by which the damage layer is removed.
REFERENCES:
patent: 4816115 (1989-03-01), Horner et al.
patent: 4923828 (1990-05-01), Gluck et al.
patent: 5057187 (1991-10-01), Shinagawa et al.
patent: 5094712 (1992-03-01), Becket et al.
patent: 5198634 (1993-03-01), Mattson et al.
patent: 5306671 (1994-04-01), Ogawa et al.
patent: 5478403 (1995-12-01), Shinagawa et al.
Nguyen Ha Tran
Niebling John F.
Tokyo Electron Limited
LandOfFree
Semiconductor wafer etching method and post-etching process does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor wafer etching method and post-etching process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor wafer etching method and post-etching process will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1515218