Semiconductor wafer etching method

Details Semiconductor wafer etching method Semiconductor wafer etching method

1994-10-25

1999-02-23

Breneman, Bruce

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438752, 216 46, 216 90, H01L 21302

Patent

active

058743650

ABSTRACT:
A semiconductor wafer etching method is disclosed that allows etching without use of restricted ozone-destroying solvents such as trichloroethane or fluorocarbons. This method involves forming a protective film of silicon resin or alkali resistant resin on a semiconductor wafer. Then, a surface region of the wafer not covered by the protective film is etched. Finally, the protective film is peeled from the semiconductor wafer without damaging the wafer or employing solvents harmful to the environment.

REFERENCES:
patent: 3847690 (1974-11-01), Campbell, Jr. et al.
patent: 4384919 (1983-05-01), Casey
patent: 5300172 (1994-04-01), Ishiwata et al.
patent: 5324410 (1994-06-01), Kummer et al.

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