Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Substrate dicing
Reexamination Certificate
2006-11-28
2006-11-28
Fourson, George R. (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Substrate dicing
C438S068000, C438S111000, C438S113000, C438S114000, C438S120000, C438S461000, C438S462000, C438S463000, C438S464000, C438S465000, C438S460000, C438S458000
Reexamination Certificate
active
07141443
ABSTRACT:
A method which can divide a semiconductor wafer sufficiently precisely along a street by use of a laser beam, while fully avoiding or suppressing contamination of circuits formed in rectangular regions on the face of the semiconductor water, and without causing chipping to the rectangular regions on the face. A laser beam is applied from beside one of the back and the face of a semiconductor substrate and focused onto the other of the back and the face of the semiconductor substrate, or the vicinity thereof, to partially deteriorate at least a zone ranging from the other of the back and the face of the semiconductor substrate to a predetermined depth.
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Austrian Patent Office Search Report via IPOS (Singapore).
Austrian Patent Office Examination Report via IPOS (Singapore).
Kobayashi Satoshi
Nagai Yusuke
Disco Corporation
Fourson George R.
Pham Thanh V.
Smith , Gambrell & Russell, LLP
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