Semiconductor wafer dicing techniques

Fishing – trapping – and vermin destroying

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156645, H01L 21461, H01L 21463, H01L 21467

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active

047299711

ABSTRACT:
A dice separation technique involves producing a depressed street pattern (14) on the front device processing major surface of a wafer (11) before thinning the wafer down to a desired thickness. After mounting the wafer (11) on a suitable carrier, it is thinned down and selectively metallized to from backside contacts. Semiconductor material is removed from the central regions of the streets (14). Exposed material damaged by the material removal is also removed to eliminate micro-cracking while producing dice (12 and 13) having straight and smooth orthogonal edges. The present technique is particularly suitable for working with brittle compound semiconductor material between die areas having FETs or MMICs embedded therein.

REFERENCES:
patent: 4159222 (1979-06-01), Lebow et al.
patent: 4266334 (1981-05-01), Edwards et al.
Iida et al., J. Electrochem. Soc.:Solid State Science, V. 118, No. 5, pp. 768-771 (May 1971).
Tsang et al., Appl. Physics Ltts., V. 28, No. 1 (Jan. 1976), pp. 44-46.
Kuhn-Kuhnenfeld, J. Electrochem. Soc.:Solid State Science, V. 119, No. 8, pp. 1063-1068 (Aug. 1972).

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