Semiconductor wafer cleaning using condensed-phase processing

Details Semiconductor wafer cleaning using condensed-phase processing Semiconductor wafer cleaning using condensed-phase processing

1992-08-28

1993-11-16

Brunsman, David

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

B08B 308, B08B 310, B08B 312

Patent

active

052619656

ABSTRACT:
A method and system for semiconductor wafer cleaning within a condensed-phase processing environment (54) is based on first cooling the semiconductor wafer (52) to a predetermined temperature in order to condense a liquid film (156) on the semiconductor wafer surface from a condensable process gas or gas mixture. Then, the method and system promote thermally activated surface reactions and rapidly evaporate liquid film (156) from the semiconductor wafer surface using a high peak power, short pulse duration energy source such as a pulsed microwave source to dissolve surface contaminants and produce drag forces sufficiently large to remove particulates (154) and other surface contaminants from the surface of the semiconductor wafer. The method and system of this invention can remove various organic, metallic, native oxide, and particulate contaminants from semiconductor wafer surface.

REFERENCES:
patent: 3661660 (1972-05-01), Wessells et al.
patent: 3762952 (1973-10-01), Gouin et al.
patent: 4474199 (1984-10-01), Blaudszun
patent: 5013366 (1991-05-01), Jackson et al.
patent: 5113802 (1992-05-01), Le Blanc
patent: 5143663 (1992-08-01), Leyden et al.

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