Semiconductor wafer cleaning method

Details Semiconductor wafer cleaning method Semiconductor wafer cleaning method

1999-07-20

2000-12-12

El-Arini, Zeinab

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

134 2, 134 3, 134 26, 134 28, 134 34, 134 41, 134902, B08B 308, B08B 312, C23G 102

Patent

active

061584452

ABSTRACT:
Semiconductor wafers are positioned in a cleaning tank and subjected to sequential flows of one or more highly diluted cleaning solutions that are injected into the lower end of the tank and allowed to overflow at the upper end. One solution comprises one part ammonium hydroxide, two parts hydrogen peroxide, and 300-600 parts deionized water together with a trace of high purity surfactant. Rinsing water is flowed through the tank after the first solution is dumped. A second solution comprises highly dilute hydrofluoric acid. A third solution is more dilute than the first solution. A fourth solution contains hydrochloric acid greatly diluted with deionized water. The solutions are initiated either by injecting the chemicals into an incoming DI water line or directly into the tank. The cleaning tank is provided with a megasonic generator in its lower portion for selective application of megasonic energy. Quick dump valves in the tank bottom enable the solutions to be quickly dumped followed by one or more rinse steps, including a quick refill while spraying and then dumping of the rinsing water.

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