Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1998-06-18
2000-07-25
Picard, Leo P.
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257640, 257636, 257649, 257637, 438791, 438624, H01L 2976, H01L 2316
Patent
active
060939567
ABSTRACT:
In one aspect, the invention includes a method of semiconductive wafer processing comprising forming a silicon nitride layer over a surface of a semiconductive wafer, the silicon nitride layer comprising at least two portions, one of the at least two portions generating a compressive force against the other of the at least two portions, and the other of the at least two portions generating a tensile force against the one of the at least two portions. In another aspect, the invention includes a method of reducing stress on semiconductive wafer, the semiconductive wafer having a pair of opposing surfaces and having more silicon nitride over one of the opposing surfaces than over the other of the opposing surfaces, the method comprising providing the silicon nitride over the one of the opposing surfaces to comprise a first portion, a second portion and a third portion, the first, second and third portions being elevationally displaced relative to one another, the second portion being between the first and third portions, the second portion having a greater stoichiometric amount of silicon than the first and third portions, the semiconductive wafer being subjected to less stress than if the silicon nitride over the one of the opposing surfaces had a constant stoichiometric amount of silicon throughout its thickness. In yet other aspects, the invention includes semiconductive wafer assemblies.
REFERENCES:
patent: 3549411 (1970-12-01), Bean et al.
patent: 3884698 (1975-05-01), Kakihama et al.
patent: 4330569 (1982-05-01), Gulett et al.
patent: 4446194 (1984-05-01), Candelaria et al.
patent: 4485553 (1984-12-01), Christian et al.
patent: 4499656 (1985-02-01), Fabian et al.
patent: 4543707 (1985-10-01), Ito et al.
patent: 4695872 (1987-09-01), Chatterjee
patent: 4996081 (1991-02-01), Ellul et al.
patent: 5045345 (1991-09-01), Singer
patent: 5045847 (1991-09-01), Tarui et al.
patent: 5098865 (1992-03-01), Machado et al.
patent: 5160998 (1992-11-01), Itoh et al.
patent: 5178016 (1993-01-01), Dauenhauer et al.
patent: 5219788 (1993-06-01), Abernathey et al.
patent: 5306946 (1994-04-01), Yamamoto
patent: 5442223 (1995-08-01), Fujii
patent: 5489542 (1996-02-01), Iwai et al.
patent: 5518946 (1996-05-01), Kuroda
patent: 5523616 (1996-06-01), Den
patent: 5554418 (1996-09-01), Ito et al.
patent: 5756404 (1998-05-01), Friedenreich et al.
patent: 5831321 (1998-11-01), Nagayama
patent: 5834374 (1998-11-01), Cabral, Jr. et al.
patent: 5926739 (1999-07-01), Rolfson et al.
Mayer et al.; "Electronic Materials Science: For Integrated Circuits in Si and GaAs"; pp. 269-274.
Kanicki, Wagner et al.; "Intrinsic Stress in Silicon Nitride and Silicon Dioxide Films Prepared by Various Deposition Techniques"; Jun. 1988; Abstract.
Chang et al.; "Passivation of GaAs FET's with PECVD Silicon Nitride Films of Different Stress States"; IEEE, vol. 35, No. 9, Sep. 1988; pp. 1412-1418.
Kovac et al.; "Silicon Nitride Overcoats for Thin Film Magnetic Recording Media"; IEEE, vol. 27, No. 6, Nov. 1991; pp. 5070-5072.
Wolf et al.; "Silicon Processing for the VLSI Era, vol. 1: Process Technology--Properties and Chemical Vapor Deposition of Silicon Nitride", pp. 191-193.
Wolf, S., "Silicon Processing For The VLSI Era", vol. 1, pp. 177-178.
Wolf, S., "Silicon Processing For The VLSI Era", vol. 2, pp. 37-38, 598-599 .
DeBoer Scott J.
Fischer Mark
Moore John T.
Duong Hung Van
Micro)n Technology, Inc.
Picard Leo P.
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