Semiconductor wafer and semiconductor device provided with...

Semiconductor device manufacturing: process – Direct application of electrical current

Reexamination Certificate

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C438S614000, C438S652000, C438S674000, C257SE23012

Reexamination Certificate

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10323645

ABSTRACT:
A semiconductor wafer provided with columnar electrodes which have plated nickel, palladium, and gold films successively formed at the top thereof, or have a plated solder film at their top. The semiconductor wafer can be preferably used for producing a chip-sized semiconductor device provided with columnar electrodes to which an external connection terminal, such as a solder ball, is to be bonded. Methods of producing the semiconductor wafer and device by use of plating are also disclosed.

REFERENCES:
patent: 5563102 (1996-10-01), Michael
patent: 5698465 (1997-12-01), Lynch et al.
patent: 6030890 (2000-02-01), Iwabuchi
patent: 6057222 (2000-05-01), Pahl et al.
patent: 6228678 (2001-05-01), Gilleo et al.
patent: 6297140 (2001-10-01), Uzoh et al.
patent: 6365501 (2002-04-01), Farnworth
patent: 197 41 436 (1998-12-01), None
patent: 0 853 337 (1998-07-01), None
patent: 1 011 141 (2000-06-01), None
Hou M.M.: “Super CSP: The Wafer Level Package” Jul. 1998, pp. F-01-F10.

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