Semiconductor wafer and method of manufacturing same

Details Semiconductor wafer and method of manufacturing same Semiconductor wafer and method of manufacturing same

1996-05-21

1999-02-23

Niebling, John F.

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

438143, H01L 21265

Patent

active

058743480

ABSTRACT:
In a semiconductor wafer according to this invention, an epitaxial layer is formed on the surface of a semiconductor substrate, a second element which is not the same but homologous as a first element constituting the semiconductor substrate is present to have a peak concentration on the semiconductor substrate side rather than the surface, and this peak concentration is 1.times.10.sup.16 atoms/cm.sup.3 or more.

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