Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2007-03-27
2007-03-27
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C438S464000, C438S977000
Reexamination Certificate
active
10751657
ABSTRACT:
A conveyance system for a semiconductor wafer can be used without any change before and after a support plate is adhered to the wafer. Also, the finish accuracy of the wafer and the positioning accuracy between the wafer and the support plate can be relaxed, thus improving the manufacturing efficiency. The wafer is formed on its peripheral portion with a stepped portion, which is deeper than a finished thickness obtained by partial removal of the rear surface thereof and which can be eliminated by the partial removal of the wafer rear surface. The separation portion has a length which extends radially outward from a flat surface, and which is greater than a total sum of a maximum-minimum difference between the finish allowances of the diameters of the wafer and the support plate, and a maximum value of a positioning error between the wafer and the support plate generated upon adhesion thereof.
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Nemoto Yoshihiko
Sunohara Masahiro
Takahashi Kenji
Duong Khanh
Kabushiki Kaisha Toshiba
McDermott Will & Emery LLP
Renesas Technology Corp.
Shinko Electric Industries
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