Semiconductor wafer and method for cutting the same

Details Semiconductor wafer and method for cutting the same Semiconductor wafer and method for cutting the same

2011-01-04

2011-01-04

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

Mesa structure

C257S462000, C257SE29005

Reexamination Certificate

active

07863711

ABSTRACT:
A semiconductor wafer and a method for cutting the same are provided, which enable separation of the semiconductor wafer by natural cleavage planes. The cutting method includes preparing a substrate including a semiconductor layer with at least one projection, formed on a predetermined area thereof; forming a post on an upper surface of the semiconductor layer at one or both sides of the projection to be placed on a cleaving line for cutting of the semiconductor layer; and cutting the substrate including the semiconductor layer along the cleaving line by performing a scribing process in a direction from the substrate and a breaking process in a direction from the semiconductor layer.

REFERENCES:
patent: 2003/0141508 (2003-07-01), Okuyama et al.
patent: 2005/0151145 (2005-07-01), Lin et al.
patent: 2007/0091958 (2007-04-01), Miyachi et al.

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