Active solid-state devices (e.g. – transistors – solid-state diode – Alignment marks
Reexamination Certificate
2005-06-15
2009-06-30
Ghyka, Alexander G (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Alignment marks
C257S618000, C257S620000, C257S622000, C257SE23179
Reexamination Certificate
active
07554211
ABSTRACT:
A semiconductor wafer1has first scribe lines31in two mutually perpendicular directions which have a first width and divide the semiconductor wafer1into a plurality of areas; second scribe lines32which have a second width smaller than the first width and divide the area into a plurality of semiconductor chip areas2; an electrode pad5formed along the edge of the semiconductor chip area2; and a metal-containing accessory pattern4disposed in the scribe lines. In the second scribe lines32, the accessory pattern4is absent in at least the outermost surface in an area adjacent to the edge having the electrode pad5in the chip area2.
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Kida Tsuyoshi
Noda Takamitsu
Ghyka Alexander G
NEC Electronics Corporation
Roman Angel
Young & Thompson
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